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| e PTB 20146 0.4 Watt, 1.8-2.0 GHz Cellular Radio RF Power Transistor Description The 20146 is a class A, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 0.4 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 0.4 Watt, 1.8-2.0 GHz Class A Characteristics Tested to solderability standards: - IEC-68-2-54 - ANSI/J Std-002-A Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel Typical Output Power vs. Input Power 1.0 VCC = 26 V Output Power (Watts) 0.8 0.6 0.4 0.2 0.0 0.00 ICQ = 140 mA f = 2.0 GHz 20 14 6 LO TC OD E 0.02 0.04 0.06 0.08 0.10 Input Power (Watts) Package 20208 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) 1 9/28/98 TSTG RJC Symbol VCER VCBO VEBO IC PD Value 50 50 4.0 0.5 5.4 0.031 -40 to +150 32.3 Unit Vdc Vdc Vdc Adc Watts W/C C C/W PTB 20146 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 10 mA, RBE = 22 VBE = 0 V, IC = 5 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 250 mA Symbol V(BR)CER V(BR)CES V(BR)EBO hFE Min 50 50 4 20 Typ -- -- 5 40 Max -- -- -- -- Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, Pout = 0.4 W, ICQ = 140 mA, f = 2.0 GHz) Output Power at 1 dB Compressed (VCC = 26 Vdc, ICQ = 140 mA, f = 2.0 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 0.4 W, ICQ = 140 mA, f = 2.0 GHz--all phase angles at frequency of test) Symbol Gpe P-1dB Min 8 0.4 -- Typ 10 0.6 -- Max -- -- 5:1 Units dB Watts -- Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 26 Vdc, Pout = 0.4 W, ICQ = 140 mA) Z Source Z Load Frequency GHz 1.800 1.900 2.000 R 18.8 18.1 18.1 Z Source jX 3.0 5.3 9.3 R 5.8 8.6 5.0 Z Load jX 22.0 22.4 21.6 Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) Ericsson Components AB 1995 EUS/KR 1301-PTB 20146 Uen Rev. D 09-28-98 2 5/19/98 |
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